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| HUR3060 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C(TAB) C A=Anode, C=Cathode, TAB=Cathode A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 HUR3060 VRSM V 600 VRRM V 600 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=135oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=1.3A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 70 30 250 0.2 0.1 -55...+175 175 -55...+150 165 0.8...1.2 6 Unit A A mJ A o C W Nm g HUR3060 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 250 1 1.25 1.60 0.9 0.25 Unit uA mA V K/W ns A IR VF RthJC RthCH trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C o 35 6 FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR3060 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 70 A 60 IF 50 TVJ=150C 3000 T = 100C nC VVJ = 300V R 2500 50 A IRM 40 TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A Qr 2000 1500 1000 IF= 60A IF= 30A IF= 15A 40 TVJ=100C 30 30 20 TVJ=25C 20 10 0 0.0 500 0 100 10 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt 0.5 1.0 1.5 VF V2.0 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 130 ns 120 TVJ= 100C VR = 300V Fig. 3 Peak reverse current IRM versus -diF/dt 20 V VFR tfr 15 VFR 2.0 1.2 us tfr 0.9 1.5 Kf 1.0 IRM trr 110 100 90 IF= 60A IF= 30A IF= 15A 10 0.6 0.5 Qr 5 80 70 0 40 80 120 C 160 TVJ 0 200 400 600 -diF/dt 800 A/us 1000 0 0 200 400 TVJ= 100C IF = 30A 0.3 0.0 0.0 600 A/us 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.465 0.179 0.256 ti (s) 0.0052 0.0003 0.0396 0.1 ZthJC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case |
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